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Low noise bipolar RF transistor Infineon BFP760H6327 silicon germanium type for RF device integration

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Low noise bipolar RF transistor Infineon BFP760H6327 silicon germanium type for RF device integration

Emitter-Base Voltage(Vebo) : 1.2V

Current - Collector Cutoff : 40nA

Pd - Power Dissipation : 240mW

Transition frequency(fT) : 45GHz

type : NPN

Current - Collector(Ic) : 70mA

Collector - Emitter Voltage VCEO : 4V

Operating Temperature : -55℃~+150℃

Description : Bipolar (BJT) Transistor NPN 4V 70mA 45GHz 240mW Surface Mount SOT-343

Mfr. Part # : BFP760H6327

Model Number : BFP760H6327

Package : SOT-343

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Product Overview

The BFP760 is a low-noise silicon germanium bipolar RF transistor designed for high-frequency applications. It offers excellent performance characteristics suitable for various RF and protection device applications.

Product Attributes

Brand: Infineon Technologies AG
Material: Silicon Germanium (SiGe)
Package: SOT343

Technical Specifications

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Collector Current vs. Collector Emitter Voltage	IC = f (VCE)					IB = Parameter in A	15
DC Current Gain	hFE = f (IC)					VCE = 3 V	15
Collector Current vs. Base Emitter Voltage	IC = f (VBE)					VCE = 2 V	16
Base Current vs. Base Emitter Forward Voltage	IB = f (VBE)					VCE = 2 V	16
Base Current vs. Base Emitter Reverse Voltage	IB = f (VEB)					VCE = 2 V	17
Transition Frequency	fT = f (IC)				GHz	f = 1 GHz, VCE = Parameter in V	18
3rd Order Intercept Point	OIP3 = f (IC)				dBm	ZS = ZL= 50 , VCE, f = Parameters	18
3rd Order Intercept Point at output	OIP3 [dBm] = f (IC, VCE)				dBm	ZS = ZL = 50 , f = 5.5 GHz	19
Compression Point at output	OP1dB [dBm] = f (IC, VCE)				dBm	ZS = ZL = 50 , f = 5.5 GHz	19
Collector Base Capacitance	CCB = f (VCB)				pF	f = 1 MHz	20
Gain	Gma, Gms, IS21I = f (f)					VCE = 3 V, IC = 30 mA	20
Maximum Power Gain	Gmax = f (IC)				dB	VCE = 3 V, f = Parameter in GHz	21
Maximum Power Gain	Gmax = f (VCE)				dB	IC = 30 mA, f = Parameter in GHz	21
Input Reflection Coefficient	S11 = f (f)					VCE = 3 V, IC = 10 / 30 mA	22
Source Impedance for Minimum Noise Figure	Zopt = f (f)					VCE = 3 V, IC = 10 / 30 mA	22
Output Reflection Coefficient	S22 = f (f)					VCE = 3 V, IC = 10 / 30 mA	23
Noise Figure min	NFmin = f (f)				dB	VCE = 3 V, IC = 10 / 30 mA, ZS = Zopt	23
Noise Figure min	NFmin = f (IC)				dB	VCE = 3 V, ZS = Zopt, f = Parameter in GHz	24
Noise Figure 50 Ohm	NF50 = f (IC)				dB	VCE = 3 V, ZS = 50 , f = Parameter in GHz	24
Maximum Ratings						TA = 25 C (unless otherwise specified)	6

2410121500_Infineon-BFP760H6327_C151512.pdf

Quality Low noise bipolar RF transistor Infineon BFP760H6327 silicon germanium type for RF device integration for sale

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