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Non-Repetitive Peak Forward Surge Current : 100A
Reverse Leakage Current (Ir) : 5uA
Reverse Recovery Time (trr) : 35ns
Operating Junction Temperature Range : -55℃~+150℃
Voltage - DC Reverse (Vr) (Max) : 800V
Voltage - Forward(Vf@If) : 1.7V@3A
Description : 100A 35ns 800V 1.7V@3A SMB Single Diodes RoHS
Mfr. Part # : ES3KB
Model Number : ES3KB
Package : SMB
The ES3xB SERIES Super Fast Diode is designed for surface-mounted applications, offering low reverse leakage, high forward surge current capability, and built-in strain relief for automated placement. Its SMB (DO-214AA) package is molded plastic with a passivated chip and solder-plated terminals, ensuring high temperature soldering capability. This diode is ideal for applications requiring fast switching speeds and reliable performance.
| Parameter | Symbol | ES3AB | ES3BB | ES3CB | ES3DB | ES3EB | ES3GB | ES3JB | ES3KB | Unit |
| Maximum repetitive peak reverse voltage | VRRM | 50 | 100 | 150 | 200 | 300 | 400 | 600 | 800 | V |
| Maximum RMS voltage | VRMS | 35 | 70 | 105 | 140 | 210 | 280 | 420 | 560 | V |
| Maximum DC blocking voltage | VDC | 50 | 100 | 150 | 200 | 300 | 400 | 600 | 800 | V |
| Peak forward surge current (8.3ms single half sine-wave) | IFSM | 100 | A | |||||||
| Maximum instantaneous forward voltage at 3A | VF | 0.95 | 1.25 | 1.7 | V | |||||
| Maximum DC reverse current at rated DC blocking voltage (TA=25) | IR | 5 | uA | |||||||
| Maximum DC reverse current at rated DC blocking voltage (TA=100) | IRT | 100 | uA | |||||||
| Maximum reverse recovery time (NOTE 1) | trr | 35 | ns | |||||||
| Typical junction capacitance (NOTE 2) | CJ | 45 | pF | |||||||
| Typical Thermal Resistance Junction to Ambient (NOTE 3) | RJA | 65 | /W | |||||||
| Typical Thermal Resistance Junction to Lead (NOTE 3) | RJL | 20 | /W | |||||||
| Operating Temperature Range | TJ | -55 to 150 | ||||||||
| Storage Temperature Range | TSTG | -55 to 150 | ||||||||
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Super Fast Switching Diode PDW ES3KB SMB Package with Low Leakage and High Surge Current Performance Images |