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Integrated dual digital transistor ROHM EMD9T2R for inverter and driver applications in compact size

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Integrated dual digital transistor ROHM EMD9T2R for inverter and driver applications in compact size

Input Resistor : 10kΩ

Resistor Ratio : 4.7

Number : -

Collector - Emitter Voltage VCEO : 50V

Description : 50V SOT-563 Single, Pre-Biased Bipolar Transistors RoHS

Mfr. Part # : EMD9T2R

Model Number : EMD9T2R

Package : SOT-563

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Product Overview

The EMD9 / UMD9N / IMD9A are general-purpose dual digital transistors designed for inverter, interface, and driver applications. These devices integrate NPN and PNP transistor elements within a single package, offering advantages such as reduced mounting cost and area, and independent transistor elements to eliminate interference. They are compatible with automatic mounting machines, facilitating efficient production.

Product Attributes

  • Brand: ROHM
  • RoHS: Yes

Technical Specifications

Model Package Package Size Taping Code Reel Size (mm) Tape Width (mm) Basic Ordering Unit (pcs) Marking
EMD9 SOT-563 (EMT6) 1616 T2R 180 8 8000 D9
UMD9N SOT-363 (UMT6) 2021 TR 180 8 3000 D9
IMD9A SOT-457 (SMT6) 2928 T108 180 8 3000 D9

Technical Specifications (Absolute Maximum Ratings)

Parameter Symbol DTr1 (NPN) DTr2 (PNP) Unit
Supply voltage VCC 50 -50 V
Input voltage VIN -6 to 40 -40 to 6 V
Output current IO 70 -70 mA
Collector current (MAX) IC(MAX)*1 100 -100 mA
Power dissipation PD*2*3 150 - mW/Total
Power dissipation PD*2*4 - 300 mW/Total
Junction temperature Tj 150
Range of storage temperature Tstg -55 to +150

Technical Specifications (Electrical Characteristics - For DTr1(NPN))

Parameter Symbol Conditions Min. Typ. Max. Unit
Input voltage (OFF) VI(off) VCC = 5V, IO = 100A - - 0.3 V
Input voltage (ON) VI(on) VO = 0.3V, IO = 1mA 1.4 - - V
Output voltage (ON) VO(on) IO = 5mA, II = 0.25mA - 100 300 mV
Input current II VI = 5V - - 880 A
Output current (OFF) IO(off) VCC = 50V, VI = 0V - - 500 nA
DC current gain GI VO = 5V, IO = 5mA 68 - - -
Input resistance R1 - - 7 13 k
Resistance ratio R2/R1 - - 4.7 - -
Transition frequency fT*1 VCE = 10V, IE = -5mA, f = 100MHz - 250 - MHz

Technical Specifications (Electrical Characteristics - For DTr2(PNP))

Parameter Symbol Conditions Min. Typ. Max. Unit
Input voltage (OFF) VI(off) VCC = -5V, IO = -100A - - -0.3 V
Input voltage (ON) VI(on) VO = -0.3V, IO = -1mA -1.4 - - V
Output voltage (ON) VO(on) IO = -5mA, II = -0.25mA - - -300 mV
Input current II VI = -5V - - -880 A
Output current (OFF) IO(off) VCC = -50V, VI = 0V - - -500 nA
DC current gain GI VO = -5V, IO = -5mA 68 - - -
Input resistance R1 - - 7 13 k
Resistance ratio R2/R1 - - 4.7 - -
Transition frequency fT*1 VCE = -10V, IE = 5mA, f = 100MHz - 250 - MHz

*1 Characteristics of built-in transistor.
*2 Each terminal mounted on a reference land.
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.


2411280042_ROHM-EMD9T2R_C308700.pdf


Quality Integrated dual digital transistor ROHM EMD9T2R for inverter and driver applications in compact size for sale

Integrated dual digital transistor ROHM EMD9T2R for inverter and driver applications in compact size Images

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