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Built in bias resistor digital transistor ROHM DTA113ZKAT146 PNP type for inverter and interface driver circuit designs

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Built in bias resistor digital transistor ROHM DTA113ZKAT146 PNP type for inverter and interface driver circuit designs

Operating Temperature : -55℃~+150℃

DC Current Gain : 33@5mA,5V

Current - Collector(Ic) : 100mA

type : PNP

Output Voltage(VO(on)) : 100mV@10mA,0.5mA

Transition frequency(fT) : 250MHz

Input Resistor : 1kΩ

Vce Saturation(VCE(sat)) : 300mV@500uA,10mA

Resistor Ratio : 10

Number : -

Pd - Power Dissipation : 200mW

Collector - Emitter Voltage VCEO : 50V

Description : Pre-Biased Bipolar Transistor (BJT) 50V 100mA 200mW Surface Mount TO-236-3(SOT-23-3)

Mfr. Part # : DTA113ZKAT146

Model Number : DTA113ZKAT146

Package : TO-236-3(SOT-23-3)

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Product Overview

The DTA113Z series are PNP digital transistors with built-in bias resistors, designed for simplified circuit configurations. These transistors feature integrated resistors (R1 = 1.0k, R2 = 2.2k) that eliminate the need for external input resistors, enabling inverter circuit designs with only on/off condition settings. This simplifies circuit design and is ideal for applications such as inverters, interfaces, and drivers. Complementary NPN types are available in the DTC113Z series.

Product Attributes

Brand: ROHM
Product Type: Digital Transistor (Bias Resistor Built-in Transistor)
Polarity: PNP

Technical Specifications

Model	Package	Package Size	Taping Code	Reel Size (mm)	Tape Width (mm)	Basic Ordering Unit (pcs)	Marking
DTA113ZE	SOT-416 (EMT3)	1616	TL	180	8	3000	E11
DTA113ZUA	SOT-323 (UMT3)	2021	T106	180	8	3000	111
DTA113ZKA	SOT-346 (SMT3)	2928	T146	180	8	3000	E11

Parameter	Symbol	Conditions	Value	Unit
Supply voltage	VCC		-50	V
Maximum collector current	IC(MAX.)		-100	mA
Built-in resistor R1	R1		1.0k
Built-in resistor R2	R2		10k
Input voltage (off)	VI(off)	VCC = -5V, IO = -100A	-	V
Input voltage (on)	VI(on)	VO = -0.3V, IO = -20mA	-3.0	-
Output voltage (on)	VO(on)	IO = -10mA, II = -0.5mA	-100 to -300	mV
Input current	II	VI = -5V	-	mA
Output current (off)	IO(off)	VCC = -50V, VI = 0V	-	nA
DC current gain	GI	VO = -5V, IO = -5mA	33	-
Input resistance	R1		0.7 to 1.3	k
Resistance ratio	R2/R1		8 to 12	-
Transition frequency	fT	VCE = -10V, IE = 5mA, f = 100MHz	250	MHz
Power dissipation (DTA113ZE)	PD*2	Ta = 25C	150	mW
Power dissipation (DTA113ZUA)	PD*2	Ta = 25C	200	mW
Power dissipation (DTA113ZKA)	PD*2	Ta = 25C	200	mW
Junction temperature	Tj		150
Storage temperature range	Tstg		-55 to +150

2110272130_ROHM-DTA113ZKAT146_C2909777.pdf

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