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Pb Free Semiconductor N Channel JFET Transistor onsemi MMBFU310LT1G RoHS Compliant Electronic Device

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Pb Free Semiconductor N Channel JFET Transistor onsemi MMBFU310LT1G RoHS Compliant Electronic Device

Ciss-Input Capacitance : 5pF@10V

Operating Temperature : -55℃~+150℃@(Tj)

Pd - Power Dissipation : 225mW

Drain Current (Idss) : 24mA@10V

FET Type : -

RDS(on) : -

Gate-Source Breakdown Voltage (Vgss) : 25V

Gate-Source Cutoff Voltage (VGS(off)) : 2.5V@1nA

Description : 225mW 24mA@10V 25V SOT-23 JFETs RoHS

Mfr. Part # : MMBFU310LT1G

Model Number : MMBFU310LT1G

Package : SOT-23

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Product Overview

The MMBFU310LT1G is an N-Channel JFET Transistor designed for various electronic applications. This device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant, ensuring environmental responsibility. It offers reliable performance with key features like specified breakdown voltage, low leakage currents, and defined on-characteristics.

Product Attributes

Brand: Semiconductor Components Industries, LLC (ON Semiconductor)
Certifications: PbFree, Halogen Free/BFR Free, RoHS Compliant

Technical Specifications

Characteristic	Symbol	Min	Max	Unit	Notes
OFF CHARACTERISTICS
GateSource Breakdown Voltage	V(BR)GSS	-25	-	Vdc	(IG = 1.0 mAdc, VDS = 0)
Gate Leakage Current	IG1SS	-	-150	pA	(VGS = 15 Vdc, VDS = 0)
Gate Leakage Current (TA = 125C)	IG2SS	-	-150	nAdc	(VGS = 15 Vdc, VDS = 0, TA = 125C)
Gate Source Cutoff Voltage	VGS(off)	-2.5	-6.0	Vdc	(VDS = 10 Vdc, ID = 1.0 nAdc)
ON CHARACTERISTICS
ZeroGateVoltage Drain Current	IDSS	24	60	mAdc	(VDS = 10 Vdc, VGS = 0)
GateSource Forward Voltage	VGS(f)	-	1.0	Vdc	(IG = 10 mAdc, VDS = 0)
SMALLSIGNAL CHARACTERISTICS
Forward Transfer Admittance	\|Yfs\|	10	18	mmhos	(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
Output Admittance	\|yos\|	-	250	mhos	(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
Input Capacitance	Ciss	-	5.0	pF	(VGS = 10 Vdc, VDS = 0 Vdc, f = 1.0 MHz)
Reverse Transfer Capacitance	Crss	-	2.5	pF	(VGS = 10 Vdc, VDS = 0 Vdc, f = 1.0 MHz)
MAXIMUM RATINGS
DrainSource Voltage	VDS	-	25	Vdc
GateSource Voltage	VGS	-	25	Vdc
Gate Current	IG	-	10	mAdc
THERMAL CHARACTERISTICS
Total Device Dissipation (FR5 Board, TA = 25C)	PD	-	225	mW	(Note 1)
Derate above 25C		-	1.8	mW/C
Thermal Resistance, JunctiontoAmbient	R JA	-	556	C/W
Junction and Storage Temperature	TJ, Tstg	-55	+150	C

2410010303_onsemi-MMBFU310LT1G_C146720.pdf

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