Home > Single Bipolar Transistors >

High current PNP transistor ROHM 2SA1036KFRAT146R with small SOT346 package and signal amplification

Product Categories

Bipolar Transistor Arrays [120]
Bridge Rectifiers [1296]
JFETs [73]
Single Bipolar Transistors [2284]
Power Driver Modules [154]
Current Regulation - Diodes, Transistors [4]
Single IGBTs [536]
DIACs, SIDACs [39]
Single, Pre-Biased Bipolar Transistors [1334]
SCRs [158]
SCRs - Modules [48]
TRIACs [535]
RF Diodes [12]
Single Diodes [3000]
Single Zener Diodes [3000]
Variable Capacitance (Varicaps, Varactors) [79]
Single FETs, MOSFETs [3000]

Hefei Purple Horn E-Commerce Co., Ltd.

Trust Seal

Verified Supplier

Credit Check

Supplier Assessment

Contact Now

High current PNP transistor ROHM 2SA1036KFRAT146R with small SOT346 package and signal amplification

Emitter-Base Voltage(Vebo) : 5V

Current - Collector Cutoff : 1uA

Pd - Power Dissipation : 200mW

Transition frequency(fT) : 200MHz

type : PNP

Number : 1 PNP

Current - Collector(Ic) : 500mA

Collector - Emitter Voltage VCEO : 32V

Operating Temperature : -55℃~+150℃

Description : Bipolar (BJT) Transistor PNP 32V 500mA 200MHz 200mW Surface Mount SOT-346

Mfr. Part # : 2SA1036KFRAT146R

Model Number : 2SA1036KFRAT146R

Package : SOT-346

Contact Now

Product Overview

The 2SA1036K FRA is a medium power PNP transistor designed for general purpose and small signal amplification. It features a high collector current capability (500mA) within a small SOT-346 (SMT3) package, low VCE(sat) for ideal low-voltage operation, and complements the 2SC2411K FRA. This AEC-Q101 qualified transistor is suitable for various electronic applications.

Product Attributes

Brand: ROHM
Certification: AEC-Q101 Qualified
Package: SOT-346 (SMT3)

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Collector-base voltage	VCBO				-40	V
Collector-emitter voltage	VCEO				-32	V
Emitter-base voltage	VEBO				-5	V
Collector current	IC				-500	mA
Power dissipation	PD*1				200	mW
Junction temperature	Tj				150
Range of storage temperature	Tstg		-55		+150
Collector-base breakdown voltage	BVCBO	IC = -100A	-40		-	V
Collector-emitter breakdown voltage	BVCEO	IC = -1mA	-32		-	V
Emitter-base breakdown voltage	BVEBO	IE = -100A	-5		-	V
Collector cut-off current	ICBO	VCB = -20V	-		-1.0	A
Emitter cut-off current	IEBO	VEB = -4V	-		-1.0	A
Collector-emitter saturation voltage	VCE(sat)	IC = -300mA, IB = -30mA	-		-600	mV
DC current gain	hFE	VCE = -3V, IC = -100mA	120		390	-
Transition frequency	fT	VCE = -5V, IE = 20mA, f = 100MHz	-	200	-	MHz
Output capacitance	Cob	VCB = -10V, IE = 0A, f = 1MHz	-		7.0	pF

1811031210_ROHM-2SA1036KFRAT146R_C308627.pdf

Quality High current PNP transistor ROHM 2SA1036KFRAT146R with small SOT346 package and signal amplification for sale

High current PNP transistor ROHM 2SA1036KFRAT146R with small SOT346 package and signal amplification Images

Inquiry Cart 0

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Hefei Purple Horn E-Commerce Co., Ltd.
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!