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PNP Silicon Transistor LRC LBC807-40WT1G RoHS Compliant Halogen Free SC70 Package for General Purpose

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PNP Silicon Transistor LRC LBC807-40WT1G RoHS Compliant Halogen Free SC70 Package for General Purpose

Emitter-Base Voltage(Vebo) : 5V

Current - Collector Cutoff : 5uA

Pd - Power Dissipation : 200mW

Transition frequency(fT) : 100MHz

type : PNP

Number : 1 PNP

Current - Collector(Ic) : 500mA

Collector - Emitter Voltage VCEO : 45V

Operating Temperature : -55℃~+150℃

Description : Bipolar (BJT) Transistor PNP 45V 500mA 100MHz 200mW Surface Mount SC-70

Mfr. Part # : LBC807-40WT1G

Model Number : LBC807-40WT1G

Package : SC-70

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Product Overview

The LBC807-40WT1G and S-LBC807-40WT1G are PNP Silicon General Purpose Transistors from Leshan Radio Company, LTD. Designed for automotive and other applications requiring unique site and control change requirements, the S-prefix variant is AEC-Q101 qualified and PPAP capable. These transistors comply with RoHS requirements and are Halogen Free.

Product Attributes

Brand: Leshan Radio Company, LTD.
Material Compliance: RoHS, Halogen Free
Certifications: AEC-Q101 qualified and PPAP capable (S-prefix variant)
Package: SC70(SOT-323)

Technical Specifications

Parameter	Symbol	Limits	Unit	Notes
CollectorEmitter Voltage	VCEO	-45	V
CollectorBase Voltage	VCBO	-50	V
EmitterBase Voltage	VEBO	-5	V
Collector Current(Continuous)	IC	-500	mA
Total Device Dissipation (FR5 Board)	PD	150	mW	TA = 25C, Derate above 25C 1.2 mW/C
Thermal Resistance, Junction to Ambient (FR5 Board)	RJA	833	C/W
Total Device Dissipation (Alumina Substrate)	PD	200	mW	TA = 25C, Derate above 25C 1.6 mW/C
Thermal Resistance, Junction to Ambient (Alumina Substrate)	RJA	625	C/W	0.4 x 0.3 x 0.024 in. 99.5% alumina.
Junction and Storage Temperature	TJ,Tstg	-55~+150	C
CollectorEmitter Breakdown Voltage	V(BR)CEO	-45	V	(IC = -10 mA)
CollectorEmitter Breakdown Voltage	V(BR)CES	-50	V	(IC = -10 A, VEB = 0)
EmitterBase Breakdown Voltage	V(BR)EBO	-5	V	(IE = -1.0 A)
Collector Cutoff Current	ICBO	-5	A	(VCB = -20 V)
Collector Cutoff Current	ICBO	-10	nA	(VCB = -20 V, TA= 150C)
DC Current Gain	hFE	250		(IC = 100 mA, VCE = 1.0 V)
DC Current Gain	hFE	600		(IC = 500 mA, VCE = 1.0 V)
CollectorEmitter Saturation Voltage	VCE(sat)	-0.7	V	(IC = 500 mA, IB = 50 mA)
BaseEmitter Voltage	VBE(on)	-1.2	V	(IC = 500 mA, VCE = 1.0 V)
CurrentGain Bandwidth Product	fT	100	MHz	(IC = -10 mA, VCE = -5.0 V, f = 100 MHz)
Output Capacitance	Cobo	10	pF	(VCB = -10 V, f = 1.0 MHz)

Ordering Information

Device Marking	Shipping	Quantity	Part Number	S-Part Number
YL	3000/Tape&Reel	3000	LBC807-40WT1G	S-LBC807-40WT1G
YL	10000/Tape&Reel	10000	LBC807-40WT3G

2410010403_LRC-LBC807-40WT1G_C417309.pdf

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